Audio Lectures

3: Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

4: Wafer Cleaning and Gettering (cont.)

5: Wafer Cleaning and Gettering - Contamination Measurement Techniques

6: Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models

7: Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defect

8: Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

9: Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects

10: Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

11: Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques

12: Ion Implantation and Annealing - Analytic Models and Monte Carlo

13: Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

14: Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

15: Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

16: The SUPREM IV Process Simulator

17: Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

18: Thin Film Deposition and Epitaxy - CVD Examples and PVD

19: Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

20: Etching - Introduction

21: Etching - Poly Gate Etching, Stringers, Modeling of Etching

22: Silicides, Device Contacts, Novel Gate Materials

23: Growth and Processing of Strained Si/SiGe and Stress Effects on Devices