| L1 | 6.720 overview; fundamental concepts (PDF 1) (PDF 2) |
| L2 | Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) (PDF) |
| L3 | Carrier statistics in semiconductors; Fermi level (PDF) |
| L4 | Generation and recombination mechanisms; equilibrium rates (PDF) |
| L5 | Generation and recombination rates outside equilibrium (PDF) |
| L6 | Carrier dynamics; thermal motion (PDF) |
| L7 | Drift; diffusion; transit time (PDF) |
| L8 | Non-uniform doping distribution (PDF) |
| L9 | Quasi-Fermi levels; continuity equations (PDF) |
| L10 | Shockley equations; majority-carrier type situations (PDF) |
| L11 | Minority-carrier type situations: statics (PDF) |
| L12 | Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication (PDF) |
| L13 | PN junction: electrostatics in and out of equilibrium (PDF) |
| L14 | PN junction: depletion capacitance; current-voltage (I-V) characteristics (PDF) |
| L15 | PN junction: carrier storage; diffusion capacitance; PN diode: parasitics (PDF) |
| L16 | PN junction dynamics; PN diode: non-ideal and second-order effects (PDF) |
| L17 | Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics (PDF) |
| L18 | Metal semiconductor junction I-V characteristics (PDF) |
| L19 | Schottky diode; equivalent-circuit model; ohmic contacts (PDF) |
| L20 | Ideal semiconductor surface (PDF) |
| L21 | Metal-oxide-semiconductor (MOS) in equilibrium (PDF) |
| L22 | MOS outside equilibrium; Poisson-Boltzmann formulation (PDF) |
| L23 | Simplifications to Poisson-Boltzmann formulation (PDF) |
| L24 | Dynamics of MOS structure: C-V characteristics; three-terminal MOS (PDF) |
| L25 | Inversion layer transport (PDF) |
| L26 | Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics (PDF - 1.1 MB) |
| L27 | I-V characteristics (cont.): body effect, back bias (PDF) |
| L28 | I-V characteristics (cont.): channel-length modulation, sub threshold regime (PDF) |
| L29 | C-V characteristics; small-signal equivalent circuit models (PDF) |
| L30 | Short-channel MOSFET: short-channel effects (PDF) |
| L31 | MOSFET short-channel effects (cont.) (PDF) |
| L32 | MOSFET scaling (PDF) |
| L33 | Evolution of MOSFET design (PDF) |
| L34 | Bipolar junction transistor (BJT) intro; basic operation (PDF) |
| L35 | BJT I-V characteristics in forward-active (PDF) |
| L36 | Other regimes of operation of BJT (PDF) |
| L37 | BJT C-V characteristics; small-signal equivalent circuit models (PDF) |
| L38 | BJT high-frequency characteristics (PDF) |
| L39 | BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) (PDF) |
